Broadband Dielectric Characterization of Aluminum Oxide (Al2O3)
نویسندگان
چکیده
Applications for low temperature co-fired ceramics (LTCC) and high temperature co-fired ceramics (HTCC) are advancing to higher frequencies. In order to design ceramic microsystems and electronic packages, the electrical properties of materials must be well characterized over a broad frequency range. In this study, the dielectric properties of commercial Aluminum Oxide (Al2O3) with different glass loadings have been characterized using three different measurement techniques: the split-post cavity, terahertz (THz) time-domain spectroscopy, and Fourier transform infrared spectroscopy (FTIR). Specifically, the dielectric properties will be characterized from 10 GHz to infrared frequencies. A split-post cavity was employed for determination of dielectric properties in the 10 GHz range. A broadband terahertz (THz) spectroscopy technique was used to characterize the specimens using measured time-domain transmission data. The dielectric constant and loss were extracted from the sample’s frequency-domain transmission characteristics, providing data between 100 GHz to 2 THz. Additionally, Fourier transform infrared spectroscopy (FTIR) was used to characterize the samples from ~33 to 3300 cm (~ 1THz – 100 THz). The measurements from the three techniques are compared, and dielectric constant and loss data will be presented for commercial and experimental ceramic systems from 10 GHz to infrared frequencies.
منابع مشابه
Characterization of Pulsed Laser Deposited Al2O3 Gate Dielectric
The demands of future CMOS devices require a new gate dielectric material with higher dielectric constant than SiO2. Aluminum oxide is one of the high-k materials and an interesting candidate. Thin Al2O3 layers have been deposited by pulsed laser deposition (PLD) from a mono-crystalline sapphire target. This deposition technique was chosen because of its flexibility and availability. Aluminum o...
متن کاملCharacterization of atomic layer deposition HfO2, Al2O3, and plasma- enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...
متن کاملALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology
Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...
متن کاملHigh Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator
The use of aluminum oxide as the gate insulator for low temperature (<600C) polycrystalline SiGe thin film transistors (TFTs) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N20 plasma. The composition of the deposited aluminum oxide was found to be almost stoichiomertic (i.e. Al2O3), with a very small fraction of nitrogen incorporation. Even with...
متن کاملHigh-Performance Polycrystalline SiGe Thin-Film Transistors Using Al O Gate Insulators
The use of aluminum oxide as the gate insulator for low temperature (600 C) polycrystalline SiGe thin-film transistors (TFT’s) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N2O plasma. The composition of the deposited aluminum oxide was found to be almost stoichiometric (i.e., Al2O3), with a very small fraction of nitrogen incorporation. Even wi...
متن کامل